Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...
ROHM began mass production of its 1 st generation 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package.
Mitsubishi Electric Corporation will begin shipping samples of a new 16W-average-power GaN power amplifier module (PAM) for ...
Log in to download the PDF of this article on how GaN HEMTs help bring greater efficiency to switching applications. Gallium-nitride (GaN) high electron mobility ...
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