GaN high electron mobility transistors are able to excel in high-power switching systems. What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion.

Called INN040W048A, it is a 40V bi-directional GaN-on-silicon HEMT with on-state resistance as low as 4.8mΩ, which comes in a 2.1 x 2.1mm WLCSP package. It follows on from the 40V 15A 7.8mΩmax (5.5mΩ ...