A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) ...

GaN Systems is claiming up to 96% power efficiency from a 200 + 200W (8Ω ... The kit’s web page is here – viewed the video from 40 minutes for design specifics and from 50min for detailed amplifier ...

Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the ...

Learn more about how GaN is changing the landscape of power electronics and what to consider when designing it into a power supply. Steve is a contributing editor to Electronic Design.

While an undergraduate, he worked as an intern for Wolfspeed focusing on GaN power amplifier design and Ka-band device characterization. His senior capstone project, sponsored by Professor Popovic, ...

In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

This week, at the IEEE International Reliability Physics Symposium (IRPS) 2025, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates that, ...

The advantage of the monolithic chip design is significant ... single-mode DFB laser with an integrated master oscillator power amplifier, in a single monolithic chip (DFB-MOPA). The company’s GaN ...