Mitsubishi Electric announced that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) for 5G massive MIMO ...

Mitsubishi Electric Corporation will begin shipping samples of a new 16W-average-power GaN power amplifier module (PAM) for ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...

CARLSBAD, Calif.--(BUSINESS WIRE)--MaxLinear, Inc. (Nasdaq: MXL), a leader in wireless infrastructure silicon solutions, and RFHIC Corporation (KOSDAQ: 218410) today announced that RFHIC’s GaN ...

Frontgrade’s 28V GaN DC-DC Converter leverages advanced GaN FET technology to provide spacecraft designers with one of the most efficient power conversion solutions available today, offering 93% ...

TOKYO, March 18, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...