TOKYO, March 18, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...

Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

"We help power designers realize the full power potential of GaN technology by offering them a complete, reliable power-conversion ecosystem of optimized integrated modules, drivers and high-frequency ...

1250 mW of single-spatial mode power from a chip is highest output from one emitter, says Sydney firm. A 67% improvement from the previously reported 750 mW SM performance. BluGlass, a Sydney, ...

This week, at the IEEE International Reliability Physics Symposium (IRPS) 2025, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates that, ...

GaN Systems is claiming up to 96% power efficiency from a 200 + 200W (8Ω) Class-D stereo amplifier built around its gallium nitride power transistors. THD+N is under 0.03%, with further optimisation ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) for 5G massive MIMO ...

announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) for 5G massive MIMO (mMIMO) base stations on March 25. This PAM ...