Market Overview The Vietnam GaN Power Devices Market was valued at USD 7.56 million in 2023 and is projected to reach USD 34.99 million by 2029, growing at a robust CAGR of 28.90% during the forecast ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Texas Instruments (TI) (Nasdaq: TXN) today debuted new power-management chips to support the rapidly growing power needs of ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

TI has unveiled a new range of power-management chips to support the rapidly growing power needs of data centres.

Navitas exceeds both Ruby and Titanium certifications on their portfolio of AI data center PSU reference designs, ranging ...

Attend the Applied Power Electronics Conference (APEC) 2025 as Power Integrations (PI) introduces a revolutionary new ...