The synthesis involved a gallium arsenide (GaAs) solar cell with a gallium indium arsenide phosphide emitter layer. NREL has unveiled a new design for III-V rear heterojunction solar cells based ...
The cell relies on a top cell based on gallium indium phosphide (GaInP), a middle cell relying on gallium indium arsenide phosphide (GaInAsP), and a silicon bottom cell. In the paper “Wafer ...
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