As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...
The AFG24S100HR5 RF power transistor from NXP Semiconductors operates from 1 MHz to 2700 MHz and includes input-matching for extended bandwidth performance. This GaN-on-SiC depletion-mode HEMT device ...
Developed core technology that will allow practical implementation of high-density, low-power 3D DRAM, presented at IEEE International Electron Devices Meeting (IEDM) ...
The first generation of GaN transistors has yielded efficient devices that operate at 600V with turn-on and turn-off times of 3.5 nsec and 7.0 nsec, respectively. Switching times are improved through ...
LONDON — Researchers at IMEC are looking at the use of silicon transistors in the sub-threshold region of their operation as a way of pursuing ultra-low power goals. A future SoC for biomedical ...
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Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D DRAM. This development could lead to cheaper and faster memory by lowering ...
(Nanowerk News) Our society is insatiable as far as the transfer of data is concerned. Consequently, increasingly faster and cheaper transistors are being developed. In row in recent months, ...
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